The streched-exponential dependence of VT shift by gate bias and temperature stress in undoped Ge nanowire
نویسندگان
چکیده
We study I-V characteristics and time dependence of ∆VT under different VGS, temperature stresses and recovery in undoped back-gated Ge nanowire. We show that charge trapping is dominant mechanism of VGS, temperature stress and recovery by fitting measured ∆VT with stretched-exponential equation.
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